IRF9610 Series

Catalog

MOSFET P-CH 200V 1.8A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division IRF9610STRR	170 pF	1.8 A	3 W 20 W	TO-263 (D2PAK)	20 V	10 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	P-Channel	MOSFET (Metal Oxide)	200 V	4 V	3 Ohm	11 nC	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9610S	170 pF	1.8 A	3 W 20 W	TO-263 (D2PAK)	20 V	10 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	P-Channel	MOSFET (Metal Oxide)	200 V	4 V	3 Ohm	11 nC	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9610PBF	170 pF	1.8 A	20 W	TO-220AB	20 V	10 V	-55 °C	150 °C	TO-220-3	P-Channel	MOSFET (Metal Oxide)	200 V	4 V	3 Ohm	11 nC	Through Hole
Vishay General Semiconductor - Diodes Division IRF9610PBF-BE3	170 pF	1.8 A	20 W	TO-220AB	20 V		-55 °C	150 °C	TO-220-3	P-Channel	MOSFET (Metal Oxide)	200 V	4 V	3 Ohm	11 nC	Through Hole