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SIHP23N60E-GE3
Discrete Semiconductor Products

IRF9610PBF

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SIHP23N60E-GE3
Discrete Semiconductor Products

IRF9610PBF

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9610PBF
Current - Continuous Drain (Id) @ 25°C1.8 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds170 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)20 W
Rds On (Max) @ Id, Vgs3 Ohm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.66
50$ 1.02
100$ 1.00
500$ 0.84
1000$ 0.77
2000$ 0.72
5000$ 0.67

Description

General part information

IRF9610 Series

P-Channel 200 V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources