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Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N6308 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Qualification | MIL-PRF-19500/498 |
| Supplier Device Package | TO-204AA (TO-3) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 350 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 57.44 | |
Description
General part information
JAN2N6308-Transistor Series
This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.
Documents
Technical documentation and resources
No documents available