STGH30H65DFB-2AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 30 A, HIGH-SPEED HB SERIES IGBT IN AN H2PAK-2 PACKAGE
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STGH30H65DFB-2AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 650 V, 30 A, HIGH-SPEED HB SERIES IGBT IN AN H2PAK-2 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGH30H65DFB-2AG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 155 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 260 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 28 ns |
| Supplier Device Package | H2Pak-2 |
| Switching Energy | 300 µJ, 555 µJ |
| Td (on/off) @ 25°C | 24 ns, 170 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGH30H65DFB-2AG Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources