STGH30H65DFB-2AG Series

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Catalog

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Part	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C	Qualification	Mounting Type	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Operating Temperature [Max]	Operating Temperature [Min]	Grade	IGBT Type	Test Condition	Power - Max [Max]	Switching Energy	Gate Charge
STMicroelectronics STGH30H65DFB-2AG	2 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 A	H2Pak-2	24 ns 170 ns	AEC-Q101	Surface Mount	90 A	28 ns	175 °C	-55 °C	Automotive	Trench Field Stop	10 Ohm 15 V 30 A 400 V	260 W	300 µJ 555 µJ	155 nC

Catalog

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.