APTMC120TAM12CTPAG

Active

POWER FIELD-EFFECT TRANSISTOR, 220A I(D), 1200V, 0.012OHM, 6-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

APTMC120TAM12CTPAG

Active

Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 220A I(D), 1200V, 0.012OHM, 6-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APTMC120TAM12CTPAG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	220 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	483 nC
Input Capacitance (Ciss) (Max) @ Vds	8400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP6
Power - Max [Max]	925 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	SP6-P
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.4 V

APTMC120 Series

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microchip Technology APTMC120TAM34CT3AG	SP3	4 V	375 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 C	175 °C	74 A	Module	161 nC	Chassis Mount	34 mOhm	2788 pF	Silicon Carbide (SiC)
Microchip Technology APTMC120AM25CT3AG	SP3	2.2 V 4 mA	500 W	2 N-Channel (Half Bridge)	1200 V	1.2 kV	-40 °C	150 °C	113 A	SP3	197 nC	Chassis Mount	25 mOhm	3800 pF	Silicon Carbide (SiC)
Microchip Technology APTMC120AM20CT1AG	SP1	2.3 V	600 W	2 N Channel	1200 V	1.2 kV	-40 °C	150 °C	143 A	SP1		Chassis Mount		5960 pF	Silicon Carbide (SiC)	17 mOhm	360 nC
Microchip Technology APTMC120HR11CT3AG	SP3	3 V	125 W	2 N-Channel (Dual)	1200 V	1.2 kV	-40 °C	150 °C	26 A	Module		Chassis Mount			Silicon Carbide (SiC)	98 mOhm	62 nC	950 pF
Microchip Technology APTMC120HM17CT3AG	SP3	4 V	750 W	4 N-Channel	1200 V	1.2 kV	-40 C	175 °C	147 A	Module	332 nC	Chassis Mount		5576 pF	Silicon Carbide (SiC)	17 mOhm
Microchip Technology APTMC120AM55CT1AG	SP1	2 mA 2.2 V	250 W	2 N-Channel (Half Bridge)	1200 V	1.2 kV	-40 °C	150 °C	55 A	SP1	98 nC	Chassis Mount			Silicon Carbide (SiC)	49 mOhm		1900 pF
Microchip Technology APTMC120TAM12CTPAG	SP6-P	2.4 V	925 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 °C	150 °C	220 A	SP6		Chassis Mount		8400 pF	Silicon Carbide (SiC)	12 mOhm	483 nC
Microchip Technology APTMC120TAM33CTPAG	SP6-P	2.2 V	370 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 °C	150 °C	78 A	SP6		Chassis Mount			Silicon Carbide (SiC)	33 mOhm	148 nC	2850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

APTMC120 Series

Mosfet Array 1200V (1.2kV) 220A (Tc) 925W Chassis Mount SP6-P

Documents

Technical documentation and resources

No documents available