APTMC120 Series

Catalog

SIC 6N-CH 1200V 74A SP3

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microchip Technology APTMC120TAM34CT3AG	SP3	4 V	375 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 C	175 °C	74 A	Module	161 nC	Chassis Mount	34 mOhm	2788 pF	Silicon Carbide (SiC)
Microchip Technology APTMC120AM25CT3AG	SP3	2.2 V 4 mA	500 W	2 N-Channel (Half Bridge)	1200 V	1.2 kV	-40 °C	150 °C	113 A	SP3	197 nC	Chassis Mount	25 mOhm	3800 pF	Silicon Carbide (SiC)
Microchip Technology APTMC120AM20CT1AG	SP1	2.3 V	600 W	2 N Channel	1200 V	1.2 kV	-40 °C	150 °C	143 A	SP1		Chassis Mount		5960 pF	Silicon Carbide (SiC)	17 mOhm	360 nC
Microchip Technology APTMC120HR11CT3AG	SP3	3 V	125 W	2 N-Channel (Dual)	1200 V	1.2 kV	-40 °C	150 °C	26 A	Module		Chassis Mount			Silicon Carbide (SiC)	98 mOhm	62 nC	950 pF
Microchip Technology APTMC120HM17CT3AG	SP3	4 V	750 W	4 N-Channel	1200 V	1.2 kV	-40 C	175 °C	147 A	Module	332 nC	Chassis Mount		5576 pF	Silicon Carbide (SiC)	17 mOhm
Microchip Technology APTMC120AM55CT1AG	SP1	2 mA 2.2 V	250 W	2 N-Channel (Half Bridge)	1200 V	1.2 kV	-40 °C	150 °C	55 A	SP1	98 nC	Chassis Mount			Silicon Carbide (SiC)	49 mOhm		1900 pF
Microchip Technology APTMC120TAM12CTPAG	SP6-P	2.4 V	925 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 °C	150 °C	220 A	SP6		Chassis Mount		8400 pF	Silicon Carbide (SiC)	12 mOhm	483 nC
Microchip Technology APTMC120TAM33CTPAG	SP6-P	2.2 V	370 W	6 N-Channel (3-Phase Bridge)	1200 V	1.2 kV	-40 °C	150 °C	78 A	SP6		Chassis Mount			Silicon Carbide (SiC)	33 mOhm	148 nC	2850 pF