Discrete Semiconductor Products
STGD5NB120SZT4
NRNDSTMicroelectronics
5 A, 1200 V LOW DROP INTERNALLY CLAMPED IGBT
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Discrete Semiconductor Products
STGD5NB120SZT4
NRNDSTMicroelectronics
5 A, 1200 V LOW DROP INTERNALLY CLAMPED IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD5NB120SZT4 |
|---|---|
| Current - Collector Pulsed (Icm) | 10 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 75 W |
| Supplier Device Package | DPAK |
| Switching Energy | 9 mJ, 2.59 mJ |
| Td (on/off) @ 25°C | 690 ns, 12.1 µs |
| Test Condition | 1 kOhm, 960 V, 15 V, 5 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 979 | $ 2.37 | |
Description
General part information
STGD5NB120SZ Series
This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.