Catalog
5 A, 1200 V low drop internally clamped IGBT
Description
AI
This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
5 A, 1200 V low drop internally clamped IGBT
5 A, 1200 V low drop internally clamped IGBT
| Part | Power - Max [Max] | Supplier Device Package | Mounting Type | Td (on/off) @ 25°C | Package / Case | Current - Collector Pulsed (Icm) | Switching Energy | Operating Temperature [Max] | Operating Temperature [Min] | Vce(on) (Max) @ Vge, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 75 W | DPAK | Surface Mount | 12.1 µs 690 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 A | 2.59 mJ 9 mJ | 150 °C | -55 °C | 2 V | 1200 V | 1 kOhm 5 A 15 V 960 V |