MSCGLQ200SK65TG

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PM-IGBT-SP4

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Discrete Semiconductor Products

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PM-IGBT-SP4

Technical Specifications

Parameters and characteristics for this part

Specification	MSCGLQ200SK65TG

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1200V, 50A, BL2, Double Dual Common Emitter Trench 4 Fast + mSiC™ Diode Baseplate-less Hybrid Module

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Configuration	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Input Capacitance (Cies) @ Vce	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case
Microchip Technology MSCGLQ50H120CTBL2NG	Chassis Mount	110 A	Full Bridge	1200 V	Standard	2.77 nF	-55 °C	175 ░C	375 W	2.4 V	25 µA	Module
Microchip Technology MSCGLQ50DDU120CTBL2NG	Chassis Mount	110 A	Full Bridge	1200 V	Standard	2.77 nF	-55 °C	175 ░C	375 W	2.4 V	25 µA	Module
Microchip Technology MSCGLQ75H120CTBL3NG	Chassis Mount	160 A	Full Bridge	1200 V	Standard	4.4 nF	-55 °C	175 ░C	470 W	2.4 V	50 µA	Module
Microchip Technology MSCGLQ200A65TG
Microchip Technology MSCGLQ75DDU120CTBL3NG	Chassis Mount	160 A	Full Bridge	1200 V	Standard	4.4 nF	-55 °C	175 ░C	470 W	2.4 V	50 µA	Module
Microchip Technology MSCGLQ50A120CTBL1NG	Chassis Mount	110 A	Half Bridge	1200 V	Standard	2.77 nF	-55 °C	175 ░C	375 W	2.4 V	25 µA	Module
Microchip Technology MSCGLQ200SK65TG

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 146.61

General part information

'• High speed IGBT 4

• Kelvin emitter for easy drive

• Very low stray inductance

Technical documentation and resources

No documents available