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STMICROELECTRONICS STQ2LN60K3-AP
Discrete Semiconductor Products

STQ2HNK60ZR-AP

Active
STMicroelectronics

N-CHANNEL 600 V, 3.5 OHM TYP., 500 MA SUPERMESH POWER MOSFET IN A TO-92 PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+19
STMICROELECTRONICS STQ2LN60K3-AP
Discrete Semiconductor Products

STQ2HNK60ZR-AP

Active
STMicroelectronics

N-CHANNEL 600 V, 3.5 OHM TYP., 500 MA SUPERMESH POWER MOSFET IN A TO-92 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTQ2HNK60ZR-AP
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]280 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power Dissipation (Max)3 W
Rds On (Max) @ Id, Vgs4.8 Ohm
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6439$ 1.21
NewarkEach (Supplied on Cut Tape) 1$ 1.06
10$ 0.86
25$ 0.75
50$ 0.66
100$ 0.56
250$ 0.49
500$ 0.40
1000$ 0.38

Description

General part information

STQ2HNK60ZR-AP Series

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.