STQ2HNK60ZR-AP Series

N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package

Catalog

N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type
STMicroelectronics STQ2HNK60ZR-AP	30 V	600 V	280 pF	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	-55 °C	10 V	Through Hole	TO-92-3	MOSFET (Metal Oxide)	15 nC	500 mA	4.8 Ohm	3 W	4.5 V	N-Channel

Catalog

N-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.