Discrete Semiconductor Products

STH12N120K5-2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 1.45 OHM TYP., 7 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

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DocumentsAN4337 AN4250 +15

Discrete Semiconductor Products

STH12N120K5-2AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 1.45 OHM TYP., 7 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsAN4337 AN4250 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STH12N120K5-2AG

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	690 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STH12N120K5-2AG Series

Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
STMicroelectronics STH12N120K5-2AG	12 A	MOSFET (Metal Oxide)	H2Pak-2	690 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1370 pF	30 V	Surface Mount	150 °C	-55 °C	N-Channel	250 W	44.2 nC	10 V	5 V	1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	18	$ 12.57

Description

General part information

STH12N120K5-2AG Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.