STH12N120K5-2AG Series
Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package
Manufacturer: STMicroelectronics
Catalog
Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 12 A | MOSFET (Metal Oxide) | H2Pak-2 | 690 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1370 pF | 30 V | Surface Mount | 150 °C | -55 °C | N-Channel | 250 W | 44.2 nC | 10 V | 5 V | 1.2 kV |
Description
AI
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.