Discrete Semiconductor Products
STB10N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
Discrete Semiconductor Products
STB10N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB10N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.88 | |
| 10 | $ 1.56 | |||
| 100 | $ 1.24 | |||
| 500 | $ 1.05 | |||
| Digi-Reel® | 1 | $ 1.88 | ||
| 10 | $ 1.56 | |||
| 100 | $ 1.24 | |||
| 500 | $ 1.05 | |||
| N/A | 478 | $ 2.35 | ||
| Tape & Reel (TR) | 1000 | $ 0.89 | ||
| 2000 | $ 0.85 | |||
| 5000 | $ 0.82 | |||
| 10000 | $ 0.79 | |||
Description
General part information
STB10 Series
These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
Documents
Technical documentation and resources
