STB10 Series

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package

Catalog

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package

Part	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
STMicroelectronics STB10N95K5	MOSFET (Metal Oxide)	950 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	630 pF	N-Channel	TO-263 (D2PAK)	150 °C	-55 °C	30 V	8 A	Surface Mount	22 nC	5 V	800 mOhm	10 V	130 W
STMicroelectronics STB10N60M2	MOSFET (Metal Oxide)	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	400 pF	N-Channel	TO-263 (D2PAK)	150 °C	-55 °C	25 V	7.5 A	Surface Mount	13.5 nC	4 V	600 mOhm	10 V	85 W

Catalog

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package

Description

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.