Discrete Semiconductor Products

SCTH100N65G2-7AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 20 MOHM TYP., 95 A IN AN H2PAK-7 PACKAGE

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DocumentsSCTH100N65G2-7AG | Datasheet +24

Discrete Semiconductor Products

SCTH100N65G2-7AG

LTB

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 20 MOHM TYP., 95 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsSCTH100N65G2-7AG | Datasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTH100N65G2-7AG

Current - Continuous Drain (Id) @ 25°C	95 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	162 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3315 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	360 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

SCTH100N65G2-7AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package

Part	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	FET Type	Package / Case
STMicroelectronics SCTH100N65G2-7AG	Surface Mount	360 W	95 A	AEC-Q101	Automotive	H2PAK-7	650 V	18 V	22 V	-10 V	3315 pF	162 nC	26 mOhm	175 °C	-55 °C	5 V	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	510	$ 28.95
Newark	Each (Supplied on Cut Tape)	1	$ 36.60
		10	$ 34.54
		25	$ 33.38
		50	$ 32.41
		100	$ 31.50

Description

General part information

SCTH100N65G2-7AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.