SCTH100N65G2-7AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package

Part	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	FET Type	Package / Case
STMicroelectronics SCTH100N65G2-7AG	Surface Mount	360 W	95 A	AEC-Q101	Automotive	H2PAK-7	650 V	18 V	22 V	-10 V	3315 pF	162 nC	26 mOhm	175 °C	-55 °C	5 V	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.