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PowerPak SC-70-6 Single
Discrete Semiconductor Products

SIA430DJT-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 20V 12A PPAK SC70-6

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PowerPak SC-70-6 Single
Discrete Semiconductor Products

SIA430DJT-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 20V 12A PPAK SC70-6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIA430DJT-T1-GE3
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SC-70-6
Power Dissipation (Max)19.2 W
Rds On (Max) @ Id, Vgs13.5 mOhm
Supplier Device PackagePowerPAK® SC-70-6 Single
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.53
10$ 0.45
100$ 0.32
500$ 0.25
1000$ 0.20
Digi-Reel® 1$ 0.53
10$ 0.45
100$ 0.32
500$ 0.25
1000$ 0.20
Tape & Reel (TR) 3000$ 0.18
6000$ 0.17
9000$ 0.16
30000$ 0.15

Description

General part information

SIA430 Series

N-Channel 20 V 12A (Tc) 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Documents

Technical documentation and resources