SIA430 Series

Catalog

MOSFET N-CH 20V 12A/12A PPAK

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Technology
Vishay General Semiconductor - Diodes Division SIA430DJ-T4-GE3	12 A 12 A	PowerPAK® SC-70-6	18 nC	Surface Mount	3 V	3.5 W	19.2 W	13.5 mOhm	4.5 V 10 V	PowerPAK® SC-70-6	-55 °C	150 °C	20 V	800 pF	N-Channel	20 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIA430DJT-T4-GE3	12 A 12 A	PowerPAK® SC-70-6	18 nC	Surface Mount	3 V	3.5 W	19.2 W	13.5 mOhm	4.5 V 10 V	PowerPAK® SC-70-6	-55 °C	150 °C	20 V	800 pF	N-Channel	20 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIA430DJT-T1-GE3	12 A	PowerPAK® SC-70-6 Single	18 nC	Surface Mount	3 V	19.2 W		13.5 mOhm	4.5 V 10 V	PowerPAK® SC-70-6	-55 °C	150 °C	20 V	800 pF	N-Channel	20 V	MOSFET (Metal Oxide)