
Discrete Semiconductor Products
SIA430DJT-T4-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 12A/12A PPAK
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Discrete Semiconductor Products
SIA430DJT-T4-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 12A/12A PPAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SIA430DJT-T4-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A, 12 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SC-70-6 |
| Power Dissipation (Max) | 3.5 W |
| Power Dissipation (Max) | 19.2 W |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 6000 | $ 0.17 | |
| 9000 | $ 0.15 | |||
| 30000 | $ 0.15 | |||
Description
General part information
SIA430 Series
N-Channel 20 V 12A (Ta), 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
Documents
Technical documentation and resources