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STE48NM50
Discrete Semiconductor Products

STE48NM50

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STMicroelectronics

N-CHANNEL 500V - 0.08 OHM - 48A - ISOTOP MDMESH MOSFET

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STE48NM50
Discrete Semiconductor Products

STE48NM50

Active
STMicroelectronics

N-CHANNEL 500V - 0.08 OHM - 48A - ISOTOP MDMESH MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTE48NM50
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)550 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs117 nC
Input Capacitance (Ciss) (Max) @ Vds3700 pF
Mounting TypeChassis Mount
Operating Temperature150 °C
Package / CaseISOTOP
Power Dissipation (Max)450 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageISOTOP®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 86$ 29.71

Description

General part information

STE48NM50 Series

The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.