
STE48NM50
ActiveN-CHANNEL 500V - 0.08 OHM - 48A - ISOTOP MDMESH MOSFET
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STE48NM50
ActiveN-CHANNEL 500V - 0.08 OHM - 48A - ISOTOP MDMESH MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | STE48NM50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | ISOTOP |
| Power Dissipation (Max) | 450 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 86 | $ 29.71 | |
Description
General part information
STE48NM50 Series
The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Documents
Technical documentation and resources