STE48NM50 Series

N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET

Catalog

N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STE48NM50	117 nC	MOSFET (Metal Oxide)	550 V	ISOTOP®	48 A	10 V	150 °C	ISOTOP	N-Channel	100 mOhm	30 V	5 V	Chassis Mount	450 W	3700 pF

Catalog

N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET

Description

The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.