Discrete Semiconductor Products
STGP10NC60HD
ActiveSTMicroelectronics
PTD HIGH VOLTAGE ROHS COMPLIANT: YES
Discrete Semiconductor Products
STGP10NC60HD
ActiveSTMicroelectronics
PTD HIGH VOLTAGE ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10NC60HD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 19.2 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 65 W |
| Reverse Recovery Time (trr) | 22 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 95 µJ, 31.8 µJ |
| Td (on/off) @ 25°C | 72 ns |
| Td (on/off) @ 25°C | 14.2 ns |
| Test Condition | 10 Ohm, 15 V, 390 V, 5 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP10NC60HD Series
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.