Catalog
Very fast "H" series
Description
AI
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
Very fast "H" series
Very fast "H" series
| Part | Package / Case | Switching Energy | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Current - Collector (Ic) (Max) [Max] | Gate Charge | Supplier Device Package | Current - Collector Pulsed (Icm) | Test Condition | Reverse Recovery Time (trr) | Power - Max [Max] | Vce(on) (Max) @ Vge, Ic [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220-3 | 31.8 µJ 95 µJ | 72 ns | 14.2 ns | Through Hole | 150 °C | -55 °C | 20 A | 19.2 nC | TO-220 | 30 A | 5 A 10 Ohm 15 V 390 V | 22 ns | 65 W | 2.5 V | 600 V |