
Discrete Semiconductor Products
JANTX1N3595US
ActiveMicrochip Technology
DIODE GEN PURP 200MA B SQ-MELF
Deep-Dive with AI
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Discrete Semiconductor Products
JANTX1N3595US
ActiveMicrochip Technology
DIODE GEN PURP 200MA B SQ-MELF
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX1N3595US |
|---|---|
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage @ Vr | 1 nA |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | SQ-MELF, B |
| Reverse Recovery Time (trr) | 3 çs |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | SQ-MELF, B |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 11.26 | |
Description
General part information
1N3595 Series
Diode 200mA Surface Mount B, SQ-MELF
Documents
Technical documentation and resources
No documents available