STW11NM80
ActiveN-CHANNEL 800 V, 0.35 OHM TYP., 11 A MDMESH POWER MOSFET IN A TO-247 PACKAGE
STW11NM80
ActiveN-CHANNEL 800 V, 0.35 OHM TYP., 11 A MDMESH POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW11NM80 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 597 | $ 6.58 | |
Description
General part information
STW11NM80 Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources