STW11NM80 Series

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Catalog

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Supplier Device Package
STMicroelectronics STW11NM80	10 V	400 mOhm	1630 pF	30 V	11 A	N-Channel	5 V	150 °C	-65 °C	800 V	Through Hole	TO-247-3	43.6 nC	MOSFET (Metal Oxide)	150 W	TO-247-3

Catalog

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.