Discrete Semiconductor Products

GCMX040B120S1-E1

Active

SIC 1200V 40M MOSFET SOT-227

Discrete Semiconductor Products

Active

SIC 1200V 40M MOSFET SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX040B120S1-E1

Current - Continuous Drain (Id) (Tc)	57 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	121 nC
Input Capacitance (Ciss) (Max)	3185 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	242 W
Rds On (Max)	52 mOhm
Technology	SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	FET Type	Package / Case	Technology	Gate Charge (Max)
SemiQ GCMX040B120S1-E1	1200 V	-10 V	25 V	242 W	Chassis Mount	52 mOhm	4 V	20 V	3185 pF	57 A	-55 °C	175 °C	SOT-227	N-Channel	miniBLOC SOT-227-4	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	121 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 1200 V 57A (Tc) 242W (Tc) Chassis Mount SOT-227

Technical documentation and resources