Discrete Semiconductor Products

GE17045EEA3

Active

SIC 6N-CH 1700V 425A

Discrete Semiconductor Products

Active

SIC 6N-CH 1700V 425A

Technical Specifications

Parameters and characteristics for this part

Specification	GE17045EEA3

Channel Count	6
Configuration	N-Channel
Configuration - Features	3-Phase Bridge
Current - Continuous Drain (Id) (Tc)	425 A
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Max)	1207 nC
Input Capacitance (Ciss) (Max)	29100 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C, 150 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package / Case	Module
Package Name	Module
Power - Max	1250 W
Power - Max (Tc)	1250 W
Qualification	AEC-Q101
Rds On (Max)	4.45 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	4.5 V

Part	Qualification	Vgs(th) (Max)	Power - Max	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Package Name	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power - Max (Tc)
GE Aerospace GE17045EEA3	AEC-Q101	4.5 V	1250 W	4.45 mOhm	Chassis Mount	29100 pF	Silicon Carbide (SiC)	Module	1207 nC	6	N-Channel	3-Phase Bridge	425 A	-55 °C -55 °C	150 °C 175 °C	1700 V	Module	1250 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1	$ 10450.00	<4d

3D models and CAD resources for this part

General part information

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W (Tc) Chassis Mount

Technical documentation and resources