Discrete Semiconductor Products

GE12047BCA3

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MOSFET 2N-CH 1200V 475A

Discrete Semiconductor Products

Active

MOSFET 2N-CH 1200V 475A

Technical Specifications

Parameters and characteristics for this part

Part	Operating Temperature (Max)	Operating Temperature (Min)	Channel Count	Configuration - Features	Configuration	Current - Continuous Drain (Id)	Technology	Gate Charge (Max)	Rds On (Max)	Package Name	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max)	Power - Max	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Qualification
GE Aerospace GE12047CCA3	150 °C 175 °C	-55 °C -55 °C	2	Half Bridge	N-Channel	475 A	Silicon Carbide (SiC)	1248 nC	4.4 mOhm	Module	Chassis Mount	Module	29300 pF	1250 W	4.5 V	1200 V	AEC-Q101
GE Aerospace GE12047BCA3	150 °C 175 °C	-55 °C -55 °C	2	Dual	N-Channel	475 A	Silicon Carbide (SiC)	1248 nC	4.4 mOhm	Module	Chassis Mount	Module	29300 pF	1250 W	4.5 V	1200 V	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1	$ 2145.00	<4d

3D models and CAD resources for this part

General part information

Mosfet Array 1200V (1.2kV) 475A 1250W Chassis Mount

Technical documentation and resources