Specification	BD679

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

BD679 Series

NPN power Darlington transistor

Part	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics BD679	40 W	SOT-32-3	4 A	2.5 V	750	150 °C	Through Hole	500 çA	TO-126-3 TO-225AA	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources