Catalog
NPN power Darlington transistor
Description
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The devices are manufactured in planar base island technology with monolithic Darlington configuration.
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NPN power Darlington transistor
NPN power Darlington transistor
| Part | Power - Max [Max] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Mounting Type | Current - Collector Cutoff (Max) [Max] | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 40 W | SOT-32-3 | 4 A | 2.5 V | 750 | 150 °C | Through Hole | 500 çA | TO-126-3 TO-225AA | 80 V |