Discrete Semiconductor Products
STD4LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE
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Discrete Semiconductor Products
STD4LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD4LN80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 122 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 2.6 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD4LN80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency.
Documents
Technical documentation and resources