Discrete Semiconductor Products
STP6NK60Z
NRNDSTMicroelectronics
N-CHANNEL 600 V, 1 OHM TYP., 6 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
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Discrete Semiconductor Products
STP6NK60Z
NRNDSTMicroelectronics
N-CHANNEL 600 V, 1 OHM TYP., 6 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP6NK60Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP6NK60Z Series
The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
