STP6NK60Z Series

N-channel 600 V, 1 Ohm typ., 6 A SuperMESH Power MOSFET in a TO-220 package

Catalog

N-channel 600 V, 1 Ohm typ., 6 A SuperMESH Power MOSFET in a TO-220 package

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP6NK60Z	MOSFET (Metal Oxide)	905 pF	Through Hole	46 nC	TO-220-3	1.2 Ohm	TO-220	10 V	4.5 V	110 W	150 °C	-55 °C	N-Channel	30 V	600 V	6 A
STMicroelectronics STP6NK60ZFP	MOSFET (Metal Oxide)	905 pF	Through Hole	46 nC	TO-220-3 Full Pack	1.2 Ohm	TO-220FP	10 V	4.5 V		150 °C	-55 °C	N-Channel	30 V	600 V	6 A

Catalog

N-channel 600 V, 1 Ohm typ., 6 A SuperMESH Power MOSFET in a TO-220 package

Description

The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.