STD12NF06L-1
ActiveN-CHANNEL 60 V, 0.08 OHM TYP., 12 A STRIPFET II POWER MOSFET IN A IPAK PACKAGE
STD12NF06L-1
ActiveN-CHANNEL 60 V, 0.08 OHM TYP., 12 A STRIPFET II POWER MOSFET IN A IPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD12NF06L-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) [Max] | 42.8 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD12NF06L-1 Series
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources