STD12NF06L-1 Series

N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package

Catalog

N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STD12NF06L-1	60 V	2 V	N-Channel	100 mOhm	IPAK	10 nC	350 pF	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	Through Hole	16 V	5 V 10 V	42.8 W	12 A	175 °C	-55 °C

Catalog

N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.