Discrete Semiconductor Products
STP160N4LF6
ObsoleteSTMicroelectronics
N-CHANNEL 40 V, 0.0021 OHM TYP., 120 A STRIPFET F6 POWER MOSFET IN TO-220 PACKAGE
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Discrete Semiconductor Products
STP160N4LF6
ObsoleteSTMicroelectronics
N-CHANNEL 40 V, 0.0021 OHM TYP., 120 A STRIPFET F6 POWER MOSFET IN TO-220 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP160N4LF6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8130 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.82 | |
Description
General part information
STP160N4LF6 Series
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources