STP160N4LF6 Series

N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package

Catalog

N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP160N4LF6	MOSFET (Metal Oxide)	120 A	2.9 mOhm	150 W	8130 pF	N-Channel	20 V	1 V	TO-220	175 °C	-55 °C	TO-220-3	5 V 10 V	40 V	Through Hole	181 nC

Catalog

N-channel 40 V, 0.0021 Ohm typ., 120 A STripFET F6 Power MOSFET in TO-220 package

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.