Specification	STL6N3LLH6

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Input Capacitance (Ciss) (Max) @ Vds	283 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerWDFN
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	PowerFlat™ (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

STL6N3LLH6 Series

N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STL6N3LLH6	N-Channel	13 A	20 V	6-PowerWDFN	3.6 nC	PowerFlat™ (2x2)	4.5 V 10 V	Surface Mount	MOSFET (Metal Oxide)	30 V	2.4 W	25 mOhm	1 V	150 °C	-55 °C	283 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	3000	$ 0.65
		6000	$ 0.64
Digikey	N/A	2638	$ 0.92
Newark	Each (Supplied on Cut Tape)	1	$ 0.94
		10	$ 0.70
		25	$ 0.64
		50	$ 0.57
		100	$ 0.51
		250	$ 0.47
		500	$ 0.39
		1000	$ 0.37

Description

General part information

STL6N3LLH6 Series

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.