Discrete Semiconductor Products
STGW30NC60KD
ActiveSTMicroelectronics
IGBT, 60 A, 2.1 V, 200 W, 600 V, TO-247, 3 PINS
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Discrete Semiconductor Products
STGW30NC60KD
ActiveSTMicroelectronics
IGBT, 60 A, 2.1 V, 200 W, 600 V, TO-247, 3 PINS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW30NC60KD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 125 A |
| Gate Charge | 96 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Reverse Recovery Time (trr) | 40 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 350 µJ, 435 µJ |
| Td (on/off) @ 25°C [custom] | 120 ns |
| Td (on/off) @ 25°C [custom] | 29 ns |
| Test Condition | 15 V, 480 V, 20 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW30NC60KD Series
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.