Catalog
New short circuit rugged "K" series
Description
AI
This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
New short circuit rugged "K" series
New short circuit rugged "K" series
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Gate Charge | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Current - Collector (Ic) (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Current - Collector Pulsed (Icm) | Switching Energy | Supplier Device Package | Package / Case | Test Condition | Vce(on) (Max) @ Vge, Ic | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 600 V | 200 W | 96 nC | 120 ns | 29 ns | 60 A | 150 °C | -55 °C | Through Hole | 125 A | 350 µJ 435 µJ | TO-247-3 | TO-247-3 | 10 Ohm 15 V 20 A 480 V | 2.7 V | 40 ns |