Discrete Semiconductor Products

BD681

Active

DARLINGTON TRANSISTOR, NPN, 100 V, 40 W, 4 A, SOT-32, 3 PINS

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DARLINGTON TRANSISTOR, NPN, 100 V, 40 W, 4 A, SOT-32, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	BD681

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN power Darlington transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case
STMicroelectronics BD681	750	40 W	4 A	Through Hole	2.5 V	SOT-32-3	500 çA	100 V	150 °C	TO-126-3 TO-225AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources