Catalog
NPN power Darlington transistor
Description
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The devices are manufactured in planar base island technology with monolithic Darlington configuration.
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NPN power Darlington transistor
NPN power Darlington transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 750 | 40 W | 4 A | Through Hole | 2.5 V | SOT-32-3 | 500 çA | 100 V | 150 °C | TO-126-3 TO-225AA |