Specification	STGW39NC60VD

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	220 A
Gate Charge	126 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	45 ns
Supplier Device Package	TO-247-3
Switching Energy	537 µJ, 333 µJ
Td (on/off) @ 25°C	178 ns, 33 ns
Test Condition	30 A, 390 V, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGW39NC60VD Series

40 A, 600 V, very fast IGBT

Part	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Power - Max [Max]	Mounting Type	Gate Charge	Test Condition	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STGW39NC60VD	33 ns 178 ns	220 A	45 ns	250 W	Through Hole	126 nC	10 Ohm 15 V 30 A 390 V	TO-247-3	TO-247-3	80 A	600 V	2.4 V	333 µJ 537 µJ	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Technical documentation and resources