Catalog
40 A, 600 V, very fast IGBT
Description
AI
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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40 A, 600 V, very fast IGBT
40 A, 600 V, very fast IGBT
| Part | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Reverse Recovery Time (trr) | Power - Max [Max] | Mounting Type | Gate Charge | Test Condition | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Switching Energy | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 33 ns 178 ns | 220 A | 45 ns | 250 W | Through Hole | 126 nC | 10 Ohm 15 V 30 A 390 V | TO-247-3 | TO-247-3 | 80 A | 600 V | 2.4 V | 333 µJ 537 µJ | 150 °C | -55 °C |