Discrete Semiconductor Products

STH6N95K5-2

Active

STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A H2PAK-2 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsSTH6N95K5-2 | Datasheet TN1156 +15

Discrete Semiconductor Products

STH6N95K5-2

Active

STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsSTH6N95K5-2 | Datasheet TN1156 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STH6N95K5-2

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STH6N95K5-2 Series

N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	FET Type
STMicroelectronics STH6N95K5-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	110 W	10 V	Surface Mount	30 V	5 V	1.25 Ohm	6 A	950 V	13 nC	450 pF	H2Pak-2	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2550	$ 3.13
Newark	Each (Supplied on Cut Tape)	1	$ 3.93
		10	$ 2.89
		25	$ 2.68
		50	$ 2.48
		100	$ 2.27
		250	$ 2.26
		500	$ 1.99
		1000	$ 1.89

Description

General part information

STH6N95K5-2 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.