STH6N95K5-2 Series

N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

Catalog

N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	FET Type
STMicroelectronics STH6N95K5-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	110 W	10 V	Surface Mount	30 V	5 V	1.25 Ohm	6 A	950 V	13 nC	450 pF	H2Pak-2	MOSFET (Metal Oxide)	N-Channel

Catalog

N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.