Isolators

FOD814W

Obsolete

ON Semiconductor

OPTOISOLATOR 5KV TRANSISTOR 4DIP

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Isolators

FOD814W

Obsolete

ON Semiconductor

OPTOISOLATOR 5KV TRANSISTOR 4DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FOD814W

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	300 %
Current Transfer Ratio (Min) [Min]	20 %
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	105 ░C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	4 µs
Supplier Device Package	4-DIP
Vce Saturation (Max)	200 mV
Voltage - Output (Max) [Max]	70 V

FOD814A Series

4-Pin DIP Phototransistor Optocouplers

Part	Supplier Device Package	Current - DC Forward (If) (Max)	Current - Output / Channel	Number of Channels	Mounting Type	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max)	Output Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Current Transfer Ratio (Max) [Max]	Voltage - Output (Max) [Max]	Current Transfer Ratio (Max)
ON Semiconductor FOD814AS	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP (0.300" 7.62mm)		70 V	300 %
ON Semiconductor FOD814A3SD	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814A300	4-DIP	50 mA	50 mA	1	Through Hole	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP (0.300" 7.62mm)	150 %	70 V
ON Semiconductor FOD814SD	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD814S	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD8143SD	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD814300W	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP		70 V	300 %
ON Semiconductor FOD814ASD	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814W	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP		70 V	300 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FOD814A Series

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Documents

Technical documentation and resources